Infineon Technologies AG BF2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BF2040	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode 1 2007-06-01 BF2040... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown v
2	BF2040W	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode 1 2007-06-01 BF2040... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown v
3	BF2030W	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode istance Parameter Channel - soldering point1) BF2030/ BF2030R BF2030W Symbol Rthchs BF2030... Value ≤370 ≤280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Chara
4	BF2030	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode istance Parameter Channel - soldering point1) BF2030/ BF2030R BF2030W Symbol Rthchs BF2030... Value ≤370 ≤280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Chara
5	BF2030R	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode istance Parameter Channel - soldering point1) BF2030/ BF2030R BF2030W Symbol Rthchs BF2030... Value ≤370 ≤280 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Chara
6	BF2040R	Infineon Technologies AG	Silicon N-Channel MOSFET Tetrode 1 2007-06-01 BF2040... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 20 µA, VG1S = 0 , VG2S = 0 Gate1-source breakdown v