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Infineon Technologies |
IPD20N03L •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) www.DataSheet4U.com •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating tem |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP20N60S5 VDS RDS(on) ID 600 0. |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID 600 0.19 20 P-TO247 V Ω A Type SPW20N60S5 Package |
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Infineon Technologies |
IGBT Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very |
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Infineon Technologies |
IGBT C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •comp |
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Infineon Technologies |
IGBT Type IKP20N60T IKW20N60T Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25°C www.DataSheet4U.net Symbol VCE IC Value 600 40 20 Unit V A TC = 100°C Pulsed collector current, tp limited by Tjmax Tu |
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Infineon Technologies |
Reverse Conducting IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity Product Summary VDS RDS(on) ID 600 0.19 20 P-TO247 V Ω A Type SPW20N60 |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge www.DataSheet4U.com • Periodic Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO220-3-31 P-TO263-3-2 V Ω A 0.19 20 avalanche rated P-TO220-3-1 |
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Infineon Technologies |
Power-Transistor • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 11.7 75 V mΩ |
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Infineon Technologies |
Reverse conducting IGBT "& 2 T &3 "93"& 3 6#2 99 13T ?"9 9 &"=" 7 122 &31 122 &31 4"33 4"33 8 !71?# 123 $ V[\X ] E E 4+ + . ,. @ . + . . E E O, B+ . E + * #1# #+ K ` . 9 36 3"1# 123 $ E 5"17 =1 ? 7 123 $ / 3 4"33 3T 9T127 123 $ 123 $ &122 &31 &6 2 ! $ &6 9"93 |
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Infineon Technologies |
Cool MOS Power Transistor DQGVWRUDJHWHPSHUDWXUH Reverse diode dv/dt 7) 6\PERO ,' ,'SXOV ($6 EAR ,$5 VGS VGS Ptot 7M7VWJ dv/dt 9DOXH 633B, 63$ ± ± 15 8QLW $ $ P- $ 9 : & V/ |
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Infineon Technologies |
Reverse Conducting IGBT • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavio |
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Infineon Technologies |
Power-Transistor • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 11.7 75 V mΩ |
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Infineon Technologies |
Cool MOS Power Transistor DQGVWRUDJHWHPSHUDWXUH Reverse diode dv/dt 7) 6\PERO ,' ,'SXOV ($6 EAR ,$5 VGS VGS Ptot 7M7VWJ dv/dt 9DOXH 633B, 63$ ± ± 15 8QLW $ $ P- $ 9 : & V/ |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 V DS RDS(on) ID PG |
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Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to |
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Infineon Technologies |
IGBT •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparall |
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Infineon Technologies |
Reverse conducting IGBT • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop ® technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low V CEsat - easy paral |
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Desde 2024. D4U Semiconductor.
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