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20N60S5 |
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| Part Number | 20N60S5 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low e... |
| Features |
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 20 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s
Symbol dv/dt
Value 20
Unit V/ns
Symbol RthJC RthJA
Tsold
min. -
Values typ. max. - 0.6
Unit K/W
- - 62 - 35 - - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
min.
Drain-source breakdown voltage Drain-Source avalanche breakdown vol... |
| Document |
 20N60S5 Data Sheet
PDF 365.22KB |
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