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| Part Number | 20N60A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 20N60A |
| Manufacturer | IXYS |
| Title | IGBT |
| Description | Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions Maximum Ratings VCES V CGR VGES V GEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MΩ Continuous Transi. |
| Features | l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 20N60 |
ROUM |
20A 600V N-channel Enhancement Mode Power MOSFET |
|
| 2 | 20N60 |
IXYS |
IGBT |
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| 3 | 20N60 |
UTC |
600V N-CHANNEL POWER MOSFET |
|
| 4 | 20N60A4D |
Fairchild Semiconductor |
HGTG20N60A4D |
|
| 5 | 20N60A4D |
ON Semiconductor |
N-Channel IGBT |
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| 6 | 20N60B |
IXYS Corporation |
IGBT |
|
| 7 | 20N60BD1 |
IXYS Corporation |
IGBT |
|
| 8 | 20N60C2 |
Infineon Technologies |
Power Transistor |
|
| 9 | 20N60C3 |
Intersil Corporation |
N-Channel IGBT |
|
| 10 | 20N60C3 |
Infineon |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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