Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 20N60A4D |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 20N60A4D |
| Manufacturer | ON Semiconductor |
| Title | N-Channel IGBT |
| Description | SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of . |
| Features | of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti−parallel is the development type TA49372. This IGBT is ideal for many high voltage switching ap. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 20N60A |
IXYS |
IGBT |
|
| 2 | 20N60A |
JieJie |
N-channel MOSFET |
|
| 3 | 20N60 |
ROUM |
20A 600V N-channel Enhancement Mode Power MOSFET |
|
| 4 | 20N60 |
IXYS |
IGBT |
|
| 5 | 20N60 |
UTC |
600V N-CHANNEL POWER MOSFET |
|
| 6 | 20N60B |
IXYS Corporation |
IGBT |
|
| 7 | 20N60BD1 |
IXYS Corporation |
IGBT |
|
| 8 | 20N60C2 |
Infineon Technologies |
Power Transistor |
|
| 9 | 20N60C3 |
Intersil Corporation |
N-Channel IGBT |
|
| 10 | 20N60C3 |
Infineon |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
|