Busque con el número de pieza junto con el fabricante o la descripción
IPB107N20N3G |
Click to view a larger image
| Part Number | IPB107N20N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Su... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification 200 V 10.7 mW 88 A Type IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G Package Marking PG-TO263-3 107N20N PG-TO220-3 110N20N PG-TO262-3 110N20N Maximum ratings, at T j=25 °C, unless otherwise specified P... |
| Document |
 IPB107N20N3G Data Sheet
PDF 629.28KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPB107N20N3 |
Infineon |
Power-Transistor |
|
| 2 | IPB107N20N3 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IPB107N20NA |
Infineon |
Power-Transistor |
|
| 4 | IPB107N20NA |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IPB100N04S2-04 |
Infineon Technologies |
Power-Transistor |
|
| 6 | IPB100N04S2L-03 |
Infineon Technologies |
Power-Transistor |
|
Desde 2024. D4U Semiconductor.
|