Infineon SGP Hoja de datos

No.	parte #	Fabricante	Descripción
1	SGP30N60	Infineon	Fast IGBT °C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C Ptot 250 W tSC 10 µs VGE EAS ±20 165 V mJ ICpuls Symbol VCE IC 41 30 112 112 Value 600 Unit V A VCE
2	SGP04N60	Infineon Technologies AG	Fast IGBT in NPT-technology = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 4A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-252AA(DPAK) TO-251AA(IPAK) Ordering Code Q67040-S4443 Q67040-S4442 Q67041-A4708 Q67040-S4444 Symbol
3	SGP10N60	Infineon Technologies Corporation	Fast S-igbt in Npt-technology g junction and storage temperature 1) ICpul s VGE EAS 42 42 ±20 70 V mJ tSC Ptot Tj , Tstg 10 104 -55...+150 µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00 SGP
4	P20N60	Infineon	SGP20N60 Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C Ptot 179 W tSC 10 µs VGE EAS ±20 115 V mJ ICpuls Symbol VCE IC 40 20 80 80 Value 600 Unit V A VCE 600
5	GP07N120	Infineon	SGP07N120 tg -55...+150 260 °C 2 VCE V IC 8A Eoff 0.7mJ Tj M 150°C arking Package GP07N120 PG-TO-220-3-1 ymbol VCE IC Value 1200 16.5 7.9 Unit V A ICpul s V GE EAS tSC Ptot 27 27 ±20 40 10 125 W V mJ µs VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C 1
6	SGP30N60HS	Infineon	High Speed IGBT ulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time2) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Time limited
7	SGP20N60	Infineon	Fast S-IGBT in NPT-technology GE = 25 Ω , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, wavesoldering, 1.6mm (0.063 in.) from case for 10s Symbol VC
8	SGP10N60A	Infineon Technologies AG	Fast IGBT in NPT-technology stg -55...+150 °C 1) VCE 600V IC 10A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4457 Q67040-S4507 Q67040-S4510 Symbol VCE IC Value 600 20 10.6 Unit V A ICpul s VGE EAS 40 40 ±20 70 V mJ tSC Ptot 10 92
9	SGP20N60HS	Infineon Technologies AG	High Speed IGBT in NPT-technology tic transient (tp<1µs, D<0.05) Short circuit withstand time Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1)
10	SGP02N60	Infineon Technologies	IGBT torage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 2A VCE(sat) 2.2V Tj 150°C Package TO-220AB TO-263AB TO-252AA(DPAK) Ordering Code Q67040-S4504 Q67040-S4505 Q67041-A4707 Symbol VCE IC Value 600 6.0 2.9 Unit V A ICpul s VGE EAS 12 1
11	SGP15N120	Infineon	Fast IGBT t withstand time2 VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls - VGE EAS tSC Ptot Tj , Tstg - Value U
12	SGP07N120	Infineon Technologies AG	IGBT Eoff 0.7mJ Tj 150°C Package TO-220AB TO-263AB(D2PAK) Ordering Code Q67040-S4272 Q67040-S4273 Symbol VCE IC Value 1200 16.5 7.9 Unit V A ICpul s VGE EAS tSC Ptot 27 27 ±20 40 10 125 V mJ µs W VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C 1) Al
13	SGP15N60	Infineon Technologies AG	Fast IGBT in NPT-technology -55...+150 °C 1) VCE 600V IC 15A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-247AC Ordering Code Q67040-S4508 Q67041-A4711 Q67040-S4235 Symbol VCE IC Value 600 31 15 Unit V A ICpul s VGE EAS 62 62 ±20 85 V mJ tSC Ptot 10 139 µs
14	SGP02N120	Infineon Technologies	IGBT
15	SGP06N60	Infineon Technologies	IGBT Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg -55...+150 °C 1) VCE 600V IC 6A VCE(sat) 2.3V Tj 150°C Package TO-220AB TO-263AB TO-252AA(DPAK) TO-251AA(IPAK) Ordering Code Q67040-S4450 Q67040-S4448 Q67041-A4709
16	P10N60	Infineon Technologies Corporation	SGP10N60 g junction and storage temperature 1) ICpul s VGE EAS 42 42 ±20 70 V mJ tSC Ptot Tj , Tstg 10 104 -55...+150 µs W °C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Mar-00 SGP