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SGP30N60HS |
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| Part Number | SGP30N60HS |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz • NPT-Technolog... |
| Features |
ulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C Gate-emitter voltage static transient (tp<1µs, D<0.05) Short circuit withstand time2) VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Time limited operating junction temperature for t < 150h Soldering temperature, 1.6mm (0.063 in.) from case for 10s
ICpuls EAS
112 112 165 mJ
VGE tSC Ptot Tj , Tstg Tj(tl) -
±20 ±30 10 250 -55...+150 175 260
V µs W °C
1 2)
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.4 Nov 09
Power Semiconduc... |
| Document |
 SGP30N60HS Data Sheet
PDF 379.82KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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