| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Infineon |
1200V SiC Trench MOSFET • Very low switching losses • Short circuit withstand time 3 µs • Fully controllable dV/dt • Benchmark gate threshold voltage, VGS(th) = 4.5V • Robust against parasitic turn on, 0V turn-off gate voltage can be applied • Robust body diode for hard com |
|
|
|
|
Infineon |
1200V SiC MOSFET • VDSS = 1200 V at Tvj = 25°C • IDDC = 29 A at TC = 100°C • RDS(on) = 52.6 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS( |
|
|
|
|
Infineon |
Silicon Carbide MOSFET • VDSS = 1200 V at Tvj = 25°C • IDDC = 144 A at TC = 100°C • RDS(on) = 7.7 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS( |
|
|
|
|
Infineon |
1200V SiC MOSFET • VDSS = 1200 V at Tvj = 25°C • IDDC = 102 A at TC = 100°C • RDS(on) = 12.2 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS |
|
|
|
|
Infineon |
400V MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to |
|
|
|
|
Infineon |
1200V SiC MOSFET • VDSS = 1200 V at Tvj = 25°C • IDDC = 21 A at TC = 100°C • RDS(on) = 78.1 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS( |
|
|
|
|
Infineon |
MOSFET •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperatio |
|
|
|
|
Infineon |
600V G2 MOSFET •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperatio |
|
|
|
|
Infineon |
1200V SiC MOSFET • VDSS = 1200 V at Tvj = 25°C • IDDC = 53 A at TC = 100°C • RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS( |
|
|
|
|
Infineon |
Silicon Carbide MOSFET • VDSS = 1200 V at Tvj = 25°C • IDDC = 6.2 A at TC = 100°C • RDS(on) = 233.9 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VG |
|
|
|
|
Infineon |
G2 MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to |
|
|
|
|
Infineon |
MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to |
|
|
|
|
Infineon |
MOSFET • VDSS = 1200 V at Tvj = -55...175 °C • IDDC = 205A at TC = 25°C • RDS(on) = 8.7 mΩ at VGS = 20 V, Tvj = 25°C • New performance-optimized chip technology (Gen1p) with improved RDSon* A FOM • Best in class switching energy for lower switching losses a |
|
|
|
|
Infineon |
Silicon Carbide MOSFET Revolutionary semiconductor material - Silicon Carbide Optimized for fly-back topologies 12V/0V gate-source voltage compatible with most fly-back controllers Very low switching losses Benchmark gate threshold voltage, VGS(th) = 4.5V Fully |
|
|
|
|
Infineon |
MOSFET •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperatio |
|
|
|
|
Infineon |
MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQg •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin |
|
|
|
|
Infineon |
G2 MOSFET • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to |
|
|
|
|
Infineon |
MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQG •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin |
|
|
|
|
Infineon |
MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQG •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin |
|
|
|
|
Infineon |
MOSFET •Highlyrobust750Vtechnology,100%avalanchetested •Best-in-classRDS(on)xQfr •ExcellentRDS(on)xQossandRDS(on)xQG •UniquecombinationoflowCrss/CissandhighVGS(th) •Infineonproprietarydieattachtechnology •Driversourcepin |
|
Desde 2024. D4U Semiconductor.
|