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IMBG120R026M2H |
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| Part Number | IMBG120R026M2H |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Pin definition: • Pin 1 - Gate • Pin 2 - Kelvin sense contact • Pin 3…7 - Source • Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type IMBG120R026M2H Package PG-TO263-7-U01 Marking 12M2H026 Datasheet www.infineon.com Please read the sections "Important notice" and "Wa. |
| Features |
• VDSS = 1200 V at Tvj = 25°C • IDDC = 53 A at TC = 100°C • RDS(on) = 25.4 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal performance 2021-10-27 restricted • Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder Copyright © Infineon Technologies A. |
| Datasheet |
 IMBG120R026M2H Data Sheet
PDF 1.24MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IMBG120R008M2H |
Infineon |
Silicon Carbide MOSFET |
|
| 2 | IMBG120R012M2H |
Infineon |
1200V SiC MOSFET |
|
| 3 | IMBG120R045M1H |
Infineon |
1200V SiC Trench MOSFET |
|
| 4 | IMBG120R053M2H |
Infineon |
1200V SiC MOSFET |
|
| 5 | IMBG120R078M2H |
Infineon |
1200V SiC MOSFET |
|
| 6 | IMBG120R234M2H |
Infineon |
Silicon Carbide MOSFET |
|
| 7 | IMBG40R011M2H |
Infineon |
G2 MOSFET |
|
| 8 | IMBG40R015M2H |
Infineon |
MOSFET |
|
| 9 | IMBG40R025M2H |
Infineon |
G2 MOSFET |
|
| 10 | IMBG40R036M2H |
Infineon |
400V MOSFET |
|
Desde 2024. D4U Semiconductor.
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