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IMBG40R011M2H |
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| Part Number | IMBG40R011M2H |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | . . . . . . . . 1 Maximum ratings . . . 3 Thermal characteristics . . . . |
| Features |
• Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection technology for best‑in‑class thermal performance • 100% avalanche tested Potential applications • SMPS • Solar PV inverters • Energy storage, UPS and battery formation • Class‑D audio • Motor drives Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Parameter VDS RDS(on),typ ID Qos. |
| Datasheet |
 IMBG40R011M2H Data Sheet
PDF 1.28MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IMBG40R015M2H |
Infineon |
MOSFET |
|
| 2 | IMBG40R025M2H |
Infineon |
G2 MOSFET |
|
| 3 | IMBG40R036M2H |
Infineon |
400V MOSFET |
|
| 4 | IMBG120R008M2H |
Infineon |
Silicon Carbide MOSFET |
|
| 5 | IMBG120R012M2H |
Infineon |
1200V SiC MOSFET |
|
| 6 | IMBG120R026M2H |
Infineon |
1200V SiC MOSFET |
|
| 7 | IMBG120R045M1H |
Infineon |
1200V SiC Trench MOSFET |
|
| 8 | IMBG120R053M2H |
Infineon |
1200V SiC MOSFET |
|
| 9 | IMBG120R078M2H |
Infineon |
1200V SiC MOSFET |
|
| 10 | IMBG120R234M2H |
Infineon |
Silicon Carbide MOSFET |
|
Desde 2024. D4U Semiconductor.
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