Infineon GTV Hoja de datos

No.	parte #	Fabricante	Descripción
1	GTVA220701FA	Infineon	Thermally-Enhanced High Power RF GaN HEMT input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Input matched • Typical Pulsed CW performance, 2170 MHz, 48 V - Output power at P3dB = 70 W - Efficiency = 70% - Gain = 20 dB • Capable of handling
2	GTVA221701FA	Infineon	Thermally-Enhanced High Power RF GaN HEMT input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Input matched • Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB • Capabl
3	GTVA261701FA	Infineon	Thermally-Enhanced High Power RF GaN HEMT input matching, high efficiency, and a thermally-enhanced package with earless flange. Features • Input Matched • Typical Pulsed CW performance, 2690 MHz, 48 V, single side - Output power at P3dB = 170 W - Efficiency = 72% - Gain = 16 dB • GaN HE