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GTVA261701FA |
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| Part Number | GTVA261701FA |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The GTVA261701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a t... |
| Features |
input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features
• Input Matched • Typical Pulsed CW performance, 2690 MHz, 48 V, single side - Output power at P3dB = 170 W - Efficiency = 72% - Gain = 16 dB • GaN HEMT technology • High power density • High efficiency • RoHS-compliant Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications is not final and should not be used for any design activity. Please contact Infineon about... |
| Document |
 GTVA261701FA Data Sheet
PDF 119.64KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | GTVA261701FA |
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Desde 2024. D4U Semiconductor.
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