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GTVA221701FA |
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| Part Number | GTVA221701FA |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The GTVA221701FA is a 170-watt (P3dB) GaN high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a t... |
| Features |
input matching, high efficiency, and a thermally-enhanced package with earless flange.
Features
• Input matched • Typical Pulsed CW performance, 1805 MHz, 48 V, single side - Output power at P3dB = 200 W - Efficiency = 70% - Gain = 18 dB • Capable of handling 10:1 VSWR @48 V, 140 W (CW) output power • GaN HEMT technology • High power density • High efficiency • RoHS-compliant Advance Specification Data Sheets describe products that are being considered by Infineon for development and market introduction. The target performance shown in Advance Specifications is not final and should no... |
| Document |
 GTVA221701FA Data Sheet
PDF 113.71KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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