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Infineon |
IGBT-Module V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 1,70 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität In |
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Infineon Technologies |
Low profile robust silicon NPN RF bipolar transistor list • Minimum noise figure NFmin = 0.9 dB at 1.8 GHz, 2 V, 5 mA • High gain Gms = 20 dB at 1.8 GHz, 2 V, 20 mA • OIP3 = 24.5 dBm at 1.8 GHz, 2 V, 20 mA • High ESD robustness, typical 1 kV (HBM) Product validation Qualified for industrial applicatio |
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Infineon |
IGBT • LowSwitchingLosses • TrenchIGBT3 • VCEsatwithpositiveTemperatureCoefficient • LowVCEsat MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • Compactdesign • SolderContactTechnology • Rugged mounting due to integrated mou |
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Infineon |
IGBT • Increasedblockingvoltagecapabilityupto650V • Highshort-circuitcapability • Tvjop=150°C • TrenchIGBT4 • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • IntegratedNTCtemperaturesensor • Isolatedbaseplate • Copper |
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Infineon |
IGBT • ExtendedoperatingtemperatureTvjop • Lowswitchinglosses • Tvjop=150°C • TrenchIGBT4 MechanicalFeatures • Highpowerandthermalcyclingcapability • IntegratedNTCtemperaturesensor • Isolatedbaseplate • Copperbaseplate • Soldercon |
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Infineon |
IGBT atewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-R |
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Infineon |
IGBT-Module • LowSwitchingLosses • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient • LowVCEsat MechanicalFeatures • High |
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Infineon |
IGBT-Module • LowVCEsat • TrenchstopTMIGBT7 • Overloadoperationupto175°C MechanicalFeatures • 2.5kVAC1mininsulation • Al2O3substratewithlowthermalresistance • Highpowerdensity • Compactdesign • PressFITcontacttechnology ModuleLabelCode Ba |
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Infineon |
IGBT • Increasedblockingvoltagecapabilityupto650V • Highshort-circuitcapability • Tvjop=150°C • TrenchIGBT4 • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • IntegratedNTCtemperaturesensor • Isolatedbaseplate • Copper |
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Infineon |
IGBT A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V, VCE = 300V InternerGatewiderstand Internalgateresistor Tvj = 2 |
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Infineon |
IGBT oltage IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V IC = 50 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 0,80 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V Interner |
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Infineon |
IGBT • LowSwitchingLosses • LowVCEsat • TrenchIGBT4 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • Al2O3SubstratewithLowThermalResistance • HighPowerandThermalCyclingCapability • IntegratedNTCtemper |
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Infineon |
IGBT VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 2 |
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Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor is measured on the emitter lead at the soldering point to pcb Value 2.5 2.4 10 10 1 50 5 125 150 -55 ... 150 Unit V mA mW °C 1 2015-10-12 BFP520 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 450 Unit K/W Elect |
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Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor unction - soldering point1) Symbol RthJS 1 Value 2.5 2.4 10 10 1 50 5 120 150 -55 ... 150 Unit V mA mW °C Value 430 Unit K/W 2013-09-19 BFP520F Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Un |
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Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor W °C 1 2013-09-20 BFP540 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 290 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Charac |
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Infineon Technologies AG |
NPN Silicon RF Transistor tor lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jan-28-2004 BFP540F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Coll |
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Infineon |
Low Noise Silicon Bipolar RF Transistor 250 150 -65 ... 150 -65 ... 150 Unit V mA mW °C 1 2013-09-13 BFP540ESD Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 290 Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter |
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Desde 2024. D4U Semiconductor.
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