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BFP540ESD |
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| Part Number | BFP540ESD |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Low Noise Silicon Bipolar RF Transistor • For ESD protected high gain low noise amplifier • High ESD robustness typical value 1000 V (HBM) • Outstanding Gms = 21.5 dB @ 1.8 GHz Minimum noise figure NF... |
| Features |
250
150 -65 ... 150 -65 ... 150
Unit V
mA mW °C
1 2013-09-13
BFP540ESD
Thermal Resistance Parameter Junction - soldering point1)
Symbol RthJS
Value 290
Unit K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured
V(BR)CEO 4.5
5
-V
ICES
- - 1... |
| Document |
 BFP540ESD Data Sheet
PDF 616.84KB |
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