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BFP520 |
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| Part Number | BFP520 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | Low Noise Silicon Bipolar RF Transistor • Low noise amplifier designed for low voltage applications, ideal for 1.2 V or 1.8 V supply voltage • Common e.g. in cordless phones, satellite receivers and o... |
| Features |
is measured on the emitter lead at the soldering point to pcb
Value
2.5 2.4 10 10
1 50 5 125
150 -55 ... 150
Unit V
mA mW °C
1 2015-10-12
BFP520
Thermal Resistance Parameter Junction - soldering point1)
Symbol RthJS
Value 450
Unit K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 2 V, VBE = 0 VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 2 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC... |
| Document |
 BFP520 Data Sheet
PDF 564.66KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | BFP520 |
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| 2 | BFP520F |
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| 3 | BFP521 |
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Desde 2024. D4U Semiconductor.
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