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Infineon Technologies AG |
IPP15N03L • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 12.6 42 P- TO220 -3-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating t |
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Infineon |
Power Transistor • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IAUC100N08S5N043 Product Summary VDS RDS(on) ID 80 V 4.3 mW 100 A PG-TDSON-8 |
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Infineon |
MOSFET •Idealforhot-swap,batteryprotectionande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC6 |
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Infineon Technologies |
IPB05N03L • N-Channel • Logic Level • Very low on-resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated • Ideal for fast switching buck converters IPP05N0 |
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Infineon |
Power Transistor • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoH |
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Infineon |
Power Transistor • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on) ID 100 V 6.2 mW 90 A PG-TDSON-8 • N-channel - Enhancement mode - Normal level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • Green product (RoHS compliant) • 100% Avalanche |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Gr |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level 1 • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temper |
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Infineon |
MOSFET •Idealforhot-swap,batteryprotectionande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC6 |
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Infineon |
MOSFET •Batterypoweredapplication •LVmotordrives •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •175°Crated Product |
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Infineon |
Power Transistor • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested Product Summary VDS RDS(on) ID 100 V 1.5 m 300 A P/G-HSOF-8-1 |
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Infineon |
Power Transistor • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Normal level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max |
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Infineon |
Power Transistor • N-channel - Enhancement mode - Normal level • AEC qualified • MSL1 up to 260°C peak reflow • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IAUC100N10S5N040 Product Summary VDS RDS(on) ID 100 V 4 m 100 A PG-TDSON-8 1 |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL3 up to 260°C peak reflow • 175°C operating temperature • Gr |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ro |
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Infineon |
MOSFET •Idealforhot-swap,batteryprotectionande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC6 |
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Infineon |
Automotive MOSFET • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Ro |
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Infineon |
Power-Transistor |
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Infineon Technologies |
OptiMOS Power-Transistor • N-Channel Product Summary VDS R DS(on) ID 55 40 29 P- TO252 -3-11 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPD25N06S2-40 Package Ordering Code P- TO252 -3-11 Q67060-S7427 Marking 2N0640 Max |
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Infineon Technologies |
OptiMOS2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead p |
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Desde 2024. D4U Semiconductor.
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