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IAUC120N06S5N017 |
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| Part Number | IAUC120N06S5N017 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IAUC120N06S5N017 OptiMOS™-5 Power Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Normal level • MSL1 up to 260°C peak reflow • 175 °C operati... |
| Features |
• OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Normal level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Product Summary VDS RDS(on),max ID 60 V 1.7 mW 120 A PG-TDSON-8-43 1 1 Type IAUC120N06S5N017 Package PG-TDSON-8-43 Marking 5N06N017 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Drain current Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature ... |
| Document |
 IAUC120N06S5N017 Data Sheet
PDF 0.99MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IAUC120N06S5N011 |
Infineon |
Automotive MOSFET |
|
| 2 | IAUC120N06S5L022 |
Infineon |
Automotive MOSFET |
|
| 3 | IAUC120N06S5L032 |
Infineon |
Power Transistor |
|
| 4 | IAUC120N04S6L005 |
Infineon |
Power Transistor |
|
| 5 | IAUC120N04S6L008 |
Infineon |
Power Transistor |
|
| 6 | IAUC120N04S6L009 |
Infineon |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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