IAUC90N10S5N062 |
Part Number | IAUC90N10S5N062 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | IAUC90N10S5N062 OptiMOSTM-5 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on) ID 100 V 6.2 mW 90 A PG-TDSON-8 • N-channel - Enhancement ... |
Features |
• OptiMOS™ - power MOSFET for automotive applications VDS RDS(on) ID 100 V 6.2 mW 90 A PG-TDSON-8 • N-channel - Enhancement mode - Normal level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • Green product (RoHS compliant) • 100% Avalanche tested 1 1 • Feasible for automatic optical inspection (AOI) Type IAUC90N10S5N062 Package PG-TDSON-8 Marking 5N10N062 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Gate source voltage ... |
Document |
IAUC90N10S5N062 Data Sheet
PDF 779.64KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IAUC100N04S6L020 |
Infineon |
Power Transistor | |
2 | IAUC100N04S6L025 |
Infineon |
Power Transistor | |
3 | IAUC100N04S6N015 |
Infineon |
Power Transistor | |
4 | IAUC100N04S6N028 |
Infineon |
Power Transistor | |
5 | IAUC100N08S5N034 |
Infineon |
Power Transistor | |
6 | IAUC100N08S5N043 |
Infineon |
Power Transistor |