| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Infineon Technologies |
Fast IGBT in NPT-technology esoldering, 1.6mm (0.063 in.) from case for 10s Tj , Tstg Ts -55...+150 260 °C 2 C G E PG-TO-247-3-1 (TO-247AC) VCE 1200V IC 8A Eoff 0.7mJ Tj 150°C Marking K07N120 Package PG-TO-247-3-21 Symbol VCE IC Value 1200 16.5 7.9 Unit V A ICpul |
|
|
|
|
Infineon |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 V DS RDS(on) ID PG-TO220-3 650 0.6 7.3 V Ω A PG-TO2 |
|
|
|
|
Infineon |
MOSFET •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJE |
|
|
|
|
Infineon |
IGBT • Increasedblockingvoltagecapabilityto650V • High Short Circuit Capability, Self Limiting Short CircuitCurrent • TrenchIGBT4 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • IntegratedNTCtemperaturesen |
|
|
|
|
Infineon |
MOSFET •Optimizedformotordrivesandbatterypoweredapplications •Optimizedfortopsidecooling •Highcurrentcapability •175°Crated •100%avalanchetested •Superiorthermalperformance •N-Channel •Pb-freeleadplating;RoHScompliant •Halogen |
|
|
|
|
Infineon Technologies |
SPI07N60S5 • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP07N60S5 SPI07N60S5 VDS RDS(on) |
|
|
|
|
Infineon |
Rectifier Diode C= D= iR max. 0,96 V 0,66 V 0,036 mΩ v F = A + B ⋅ i F + C ⋅ ln ( i F + 1 ) + D ⋅ Sperrstrom reverse current Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand therm |
|
|
|
|
Infineon |
IPP07N03LBG • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C op |
|
|
|
|
Infineon |
IGBT • Increasedblockingvoltagecapabilityupto650V • Highshort-circuitcapability • Tvjop=150°C • TrenchIGBT4 MechanicalFeatures • IntegratedNTCtemperaturesensor • Copperbaseplate • PressFITcontacttechnology • Standardhousing ModuleL |
|
|
|
|
Infineon |
IGBT • Increasedblockingvoltagecapabilityto650V • High Short Circuit Capability, Self Limiting Short CircuitCurrent • TrenchIGBT4 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • IntegratedNTCtemperaturesen |
|
|
|
|
Infineon |
IGBT • Increasedblockingvoltagecapabilityto650V • High Short Circuit Capability, Self Limiting Short CircuitCurrent • TrenchIGBT4 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • IntegratedNTCtemperaturesen |
|
|
|
|
Infineon |
Power Transistor •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJE |
|
|
|
|
Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.6 7.3 P-TO220-3-1 |
|
|
|
|
Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Worldwide best R DS(on) in TO-251 and TO-252 • Ultra low gate charge www.DataSheet4U.com Product Summary VDS RDS(on) ID P-TO251 600 0.6 7.3 P-TO252 V Ω A • Periodic avalanche rated • Extreme dv/dt rat |
|
|
|
|
Infineon |
Rectifier Diode Tvj max vF max. max. 1,47 V 0,92 V 0,7 V 0,04 mΩ V(TO) rT A= B= C= D= iR v F = A + B ⋅ i F + C ⋅ ln ( i F + 1 ) + D ⋅ Sperrstrom reverse current iF Tvj = Tvj max , vR = VRRM 4,617E-01 2,002E-05 7,441E-03 4,190E-03 max. 100 mA Thermische Eigen |
|
|
|
|
Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to |
|
|
|
|
Infineon |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V Ω A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • High peak current capability • Improved transcondu |
|
|
|
|
Infineon |
SGP07N120 tg -55...+150 260 °C 2 VCE V IC 8A Eoff 0.7mJ Tj M 150°C arking Package GP07N120 PG-TO-220-3-1 ymbol VCE IC Value 1200 16.5 7.9 Unit V A ICpul s V GE EAS tSC Ptot 27 27 ±20 40 10 125 W V mJ µs VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C 1 |
|
|
|
|
Infineon Technologies |
Small-Signal-Transistor • Dual N-channel • Enhancement mode • Super Logic level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen free according to IEC61249-2-21 BSL207N Product Summary VDS RDS(on),max ID VGS=4.5 |
|
|
|
|
Infineon Technologies |
Smart Low Side Power Switch Product Summary · Logic Level Input Drain source voltage · Input Protection (ESD) · Thermal shutdown with auto restart • Green product (RoHS compliant) On-state resistance Nominal load current Clamping energy · Overload protection · Short circ |
|
Desde 2024. D4U Semiconductor.
|