Infineon 045 Hoja de datos

No.	parte #	Fabricante	Descripción
1	IGLT65R045D2	Infineon	Power Transistor • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits •
2	IMBG120R045M1H	Infineon	1200V SiC Trench MOSFET • Very low switching losses • Short circuit withstand time 3 µs • Fully controllable dV/dt • Benchmark gate threshold voltage, VGS(th) = 4.5V • Robust against parasitic turn on, 0V turn-off gate voltage can be applied • Robust body diode for hard com
3	IPP65R045C7	Infineon	MOSFET •IncreasedMOSFETdv/dtruggedness •BetterefficiencyduetobestinclassFOMRDS(on)EossandRDS(on)Qg •BestinclassRDS(on)/package •Easytouse/drive •Pb-freeplating,halogenfreemoldcompound •Qualifiedforindustrialgradeapplicati
4	BUZ31H3045A	Infineon	Power-Transistor
5	CY8C4045LQI-T411	Infineon	PSoC 4000T MCU • 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU with single-cycle multiply - Up to 64 KB of flash with read accelerator - Up to 8 KB of SRAM • Low-power 1.71 V to 5.5 V operation - Deep sleep mode with 6 µA always-on touch sensing - Active touch
6	CY8C4045LQI-T412	Infineon	PSoC 4000T MCU • 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU with single-cycle multiply - Up to 64 KB of flash with read accelerator - Up to 8 KB of SRAM • Low-power 1.71 V to 5.5 V operation - Deep sleep mode with 6 µA always-on touch sensing - Active touch
7	CY8C4045AXI-S412	Infineon	4000S MCU • 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU with single-cycle multiply - Up to 32 KB of flash with read accelerator - Up to 4 KB of SRAM • Programmable analog - Single-slope 10-bit ADC function provided by Capacitance sensing block - Two cur
8	CY8C4045LQI-S413	Infineon	4000S MCU • 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU with single-cycle multiply - Up to 32 KB of flash with read accelerator - Up to 4 KB of SRAM • Programmable analog - Single-slope 10-bit ADC function provided by Capacitance sensing block - Two cur
9	IPC045N10N3	Infineon	MOSFET er Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on
10	IMW120R045M1	Infineon	1200V SiC Trench MOSFET  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage  Fully controllable dV/dt  Commutation robust body diode, ready for
11	IPW60R045CPA	Infineon	Power Transistor • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive A
12	045N10N	Infineon	MOSFET •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh
13	IGT65R045D2	Infineon	Power Transistor • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits •
14	CY8C4045AZQ-S413	Infineon	4000S MCU • 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU with single-cycle multiply - Up to 32 KB of flash with read accelerator - Up to 4 KB of SRAM • Programmable analog - Single-slope 10-bit ADC function provided by Capacitance sensing block - Two cur
15	CY8C4045LQI-S411	Infineon	4000S MCU • 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU with single-cycle multiply - Up to 32 KB of flash with read accelerator - Up to 4 KB of SRAM • Programmable analog - Single-slope 10-bit ADC function provided by Capacitance sensing block - Two cur
16	CY8C4045LQI-S412	Infineon	4000S MCU • 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU with single-cycle multiply - Up to 32 KB of flash with read accelerator - Up to 4 KB of SRAM • Programmable analog - Single-slope 10-bit ADC function provided by Capacitance sensing block - Two cur
17	CY8C4045AZI-S413	Infineon	4000S MCU • 32-bit MCU subsystem - 48-MHz Arm® Cortex®-M0+ CPU with single-cycle multiply - Up to 32 KB of flash with read accelerator - Up to 4 KB of SRAM • Programmable analog - Single-slope 10-bit ADC function provided by Capacitance sensing block - Two cur
18	PTF080451E	Infineon Technologies AG	LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz • • Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P –1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body M
19	IPW60R045CP	Infineon Technologies AG	CoolMOS Power Transistor • Worldwide best R ds,on in TO247 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant Product Summary V DS @ Tjmax R DS(on),max
20	IPC045N10L3	Infineon	MOSFET arameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse Symbol V(BR)DSS VGS(th) IDSS IGSS