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IMBG120R045M1H |
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| Part Number | IMBG120R045M1H |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IMBG120R045M1H IMBG120R045M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features • Very low switching losses • Short circuit withstand time 3 µs • Fully controllable dV/dt ... |
| Features |
• Very low switching losses • Short circuit withstand time 3 µs • Fully controllable dV/dt • Benchmark gate threshold voltage, VGS(th) = 4.5V • Robust against parasitic turn on, 0V turn-off gate voltage can be applied • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal performance • Package creepage and clearance distance > 6.1mm • Sense pin for optimized switching performance Benefits • Efficiency improvement • Enabling higher frequency • Increased power density • Cooling effort reduction • Reduction of system complexity and cost Potential appli... |
| Document |
 IMBG120R045M1H Data Sheet
PDF 742.89KB |
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Desde 2024. D4U Semiconductor.
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