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IPC045N10L3 |
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| Part Number | IPC045N10L3 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | •N-channelenhancementmode •FordynamiccharacterizationrefertothedatasheetofBSZ150N10LS3G •AQL0.65forvisualinspectionaccordingtofailurecatalogue •ElectrostaticDischargeSensitive... |
| Features |
arameter
Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on- resistance Reverse diode forward on-voltage Avalanche energy, single pulse
Symbol
V(BR)DSS VGS(th) IDSS IGSS RDS(on) VSD EAS
Min. 100 1.1 -
Values Typ. Max. -1.7 2.1 0.01 1 1 100 162) 1003) 0.9 1.2 804) -
Unit Note/TestCondition
V VGS=0V,ID=1mA V VDS=VGS,ID=33µA µA VGS=0V,VDS=100V nA VGS=20V,VDS=0V mΩ VGS=4.5V,ID=2.0A V VGS=0V,IF=1A mJ ID =20 A, RGS =25 Ω
1) packaged in a PG-TDSON-8 (see ref. product). Maximum RDS(on) at VGS=10V 2)... |
| Document |
 IPC045N10L3 Data Sheet
PDF 536.03KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | IPC045N10N3 |
Infineon |
MOSFET |
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| 2 | IPC045N25N3 |
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| 3 | IPC042N03L3 |
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| 4 | IPC014N03L3 |
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| 5 | IPC020N10L3 |
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| 6 | IPC022N03L3 |
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Desde 2024. D4U Semiconductor.
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