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Infineon |
Power Transistor • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • |
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Infineon |
Power Transistor • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • |
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Infineon |
Power Transistor • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoH |
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Infineon |
Power Transistor • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • |
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Infineon Technologies |
350mA Step Down LED Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Infineon |
MOSFET •Idealforhot-swap,batteryprotectionande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC6 |
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Infineon |
60V Radiation Tolerant power MOSFET • Low RDS(on) • Single Event Effect (SEE) tolerant • Total Ionisation Dose (TID) tolerant 30 kRad approved • N-channel Product validation Qualified according AEC Q101 Electrical parameters in Table 4 are guaranteed pre- and post-irradiation. Descri |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA035002EV Package H-36275-4 Gain (dB) Drain |
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Infineon |
Smart Low-Side Power Switch • Single channel device • Very low output leakage current in OFF state • Electrostatic discharge protection (ESD) • Embedded protection functions (see below) • Green Product (RoHS compliant) • AEC Qualified Applications • Suitable for resistive, indu |
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Infineon |
MOSFET •Idealforhot-swap,batteryprotectionande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC6 |
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Infineon |
MOSFET Gate • Revolutionary semiconductor material - Silicon Carbide pin 1 • Very low switching losses • Threshold-free on state characteristic • IGBT-compatible driving voltage (18V for turn-on) • 0V turn-off gate voltage • Benchmark gate threshold |
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Infineon |
Power-Transistor • Optimized for high performance Buck converter • Low parasitic inductance • Low profile (<0.7 mm) • 100% avalanche tested • 100% R G Tested Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V) 25 V 3.5 mW 69 A 13 nC 19 nC • Double-sided cooling • |
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Infineon |
Power MOSFET • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superi |
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Infineon |
Power MOSFET • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according t |
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Infineon |
single channel smart high-side power switch • Single channel smart high-side power switch with integrated protection and diagnosis • Maximum RDS(ON) 35 mΩ at Tj = 25°C • Overvoltage lockout • Supply voltage tolerance up to 60 V • User adjustable current limitation ranging from: 3 A to 13.2 A • |
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Infineon |
MOSFET •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Optimizedforhighfrequencyswitching |
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Infineon Technologies AG |
Power Transistor • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior |
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Infineon Technologies |
Power-Transistor • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoH |
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Infineon |
MOSFET •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC6 |
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Infineon |
Power Transistor • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoH |
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Desde 2024. D4U Semiconductor.
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