PTVA035002EV Infineon Thermally-Enhanced High Power RF LDMOS FET Datasheet. existencias, precio

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PTVA035002EV

Infineon
PTVA035002EV
PTVA035002EV PTVA035002EV
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Part Number PTVA035002EV
Manufacturer Infineon (https://www.infineon.com/)
Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange...
Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA035002EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Pulsed CW Performance 450 MHz, VD = 50 V, IDQ = 0.5 A, 12 µsec pulse width, 10% duty cycle 22 85 20 Gain 18 75 65 16 55 14 Efficiency 12 45 35 10 48 a035002 gr 1 25 50 52 54 56 58 60 Output Power (dBm) Features
• Unmatched input and output
• High gain and efficiency
• Integrated ESD protection
• Human Body Model Cla...

Document Datasheet PTVA035002EV Data Sheet
PDF 366.93KB

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