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AIMW120R035M1H |
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| Part Number | AIMW120R035M1H |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | AIMW120R035M1H AIMW120R035M1H CoolSiC™ Automotive 1200V SiC Trench MOSFET 1200V G1 Silicon Carbide MOSFET Features Gate • Revolutionary semiconductor material - Silicon Carbide pin 1 • Very low ... |
| Features |
Gate
• Revolutionary semiconductor material - Silicon Carbide pin 1 • Very low switching losses • Threshold-free on state characteristic • IGBT-compatible driving voltage (18V for turn-on) • 0V turn-off gate voltage • Benchmark gate threshold voltage, VGS(th)=4.5V • Fully controllable dv/dt • Commutation robust body diode, ready for synchronous rectification • Temperature independent turn-off switching losses Benefits • Efficiency improvement • Enabling higher frequency • Increased power density • Cooling effort reduction • Reduction of system complexity and cost 12 3 Potential A... |
| Document |
 AIMW120R035M1H Data Sheet
PDF 857.40KB |
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