| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor |
N-Channel MOSFET Transistor oltage Drain Current VDS=60V; VGS= 0 VSD Diode Forward Voltage IF=25A; VGS=0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=15A;RL=2Ω toff Turn-off time 2SK1346 MIN TYP MAX UNIT 60 V 1.5 3.5 V 0.04 0.06 Ω ±100 nA 300 u |
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Inchange Semiconductor |
2SK1378 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward Volta |
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Inchange Semiconductor |
N-Channel MOSFET Transistor rce Breakdown Voltage VGS=0; ID= 10mA 500 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 1.5 3.5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=2.5A 1.3 1.5 Ω IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 ±100 nA IDSS |
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Inchange Semiconductor |
N-Channel MOSFET Transistor Threshold Voltage VDS=25V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor te Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 2SK1321 MIN TYP MAX UNIT 450 V 2.0 4 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor age VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode |
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Inchange Semiconductor |
N-Channel MOSFET Transistor e Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0 2SK1324 MIN TYP MAX UNIT 900 V 2.0 4. |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=300V; VGS= 0 MIN TYP MAX UNIT 300 V |
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Inchange Semiconductor |
N-Channel MOSFET Transistor 1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=450V; VGS= 0 VSD Diode Forward Voltage IF=7A; VGS=0 tr Rise time ton Turn-on time tf |
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Inchange Semiconductor |
N-Channel MOSFET Transistor 10mA 800 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.5 5.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A 1.0 1.5 Ω IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current |
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Inchange Semiconductor |
N-Channel MOSFET Transistor LECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ce Breakdown Voltage VGS=0; ID= 10mA 900 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 1.5 3.5 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=1.5A 3.3 4.3 Ω IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 ±100 nA IDSS |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 VSD Diode Forward V |
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Inchange Semiconductor |
N-Channel MOSFET Transistor Threshold Voltage VDS=25V; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=5A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=640V; VGS= 0 ton Turn-on time toff Turn-off time VGS=10V |
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Inchange Semiconductor |
N-Channel MOSFET Transistor te Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 2SK1322 MIN TYP MAX UNIT 500 V 2.0 4 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor S=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=400V; VGS= 0 tr Rise time t |
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Inchange Semiconductor |
N-Channel MOSFET Transistor Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=6A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 VSD Diode Forward Voltage IF=12A; VGS |
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Inchange Semiconductor |
N-Channel MOSFET Transistor h) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=10A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=200V; VGS= 0 VSD Diode Forward Voltage IF=15A; |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A IGSS Gate Source Leakage Current VGS= ±25V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=720V; VGS= 0 VSD Diode Forward |
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Desde 2024. D4U Semiconductor.
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