2SK1385 Inchange Semiconductor N-Channel MOSFET Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SK1385

Inchange Semiconductor
2SK1385
2SK1385 2SK1385
zoom Click to view a larger image
Part Number 2SK1385
Manufacturer Inchange Semiconductor
Description ·Drain Current –ID=9A@ TC=25℃ ·Drain Source Voltage- : VDSS=800V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power ...
Features 10mA 800 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.5 5.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A 1.0 1.5 Ω IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=800V; VGS= 0 500 uA VSD Diode Forward Voltage IF=9A; VGS=0 1.5 1.58 V tr Rise time 230 350 ns ton Turn-on time tf Fall time VGS=10V;ID=9A;RL=25Ω 280 425 ns 160 240 ns toff Turn-off time 460 690 ns Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The i...

Document Datasheet 2SK1385 Data Sheet
PDF 204.12KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SK1380
Toshiba
MOSFET Datasheet
2 2SK1381
Toshiba Semiconductor
Silicon N-Channel MOSFET Datasheet
3 2SK1382
Toshiba Semiconductor
Silicon N-Channel MOSFET Datasheet
4 2SK1384
Inchange Semiconductor
N-Channel MOSFET Transistor Datasheet
5 2SK1386
Inchange Semiconductor
N-Channel MOSFET Transistor Datasheet
6 2SK1387-MR
Fuji Electric
Silicon N-Channel MOSFET Datasheet
More datasheet from Inchange Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad