2SK1386 |
Part Number | 2SK1386 |
Manufacturer | Inchange Semiconductor |
Description | ·Drain Current –ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS=450 (Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed... |
Features |
1mA
RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=3A
IGSS
Gate Source Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=450V; VGS= 0
VSD
Diode Forward Voltage
IF=7A; VGS=0
tr
Rise time
ton
Turn-on time
tf
Fall time
VGS=10V;ID=6A;RL=25Ω
toff
Turn-off time
2SK1386
MIN TYP MAX UNIT
450
V
2.5
3.5
5.0
V
0.98 1.3
Ω
±100 nA
500
uA
1.1 1.65
V
50
80
ns
70
110
ns
50
80
ns
130 200
ns
Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained her... |
Document |
2SK1386 Data Sheet
PDF 203.93KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SK1380 |
Toshiba |
MOSFET | |
2 | 2SK1381 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | 2SK1382 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | 2SK1384 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
5 | 2SK1385 |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 2SK1387-MR |
Fuji Electric |
Silicon N-Channel MOSFET |