| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Inchange Semiconductor Company Limited |
Silicon PNP Power Transistor Voltage IC= -25mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A ICBO Collector Cutoff Current VCB= -180V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -8A; VCE= -4V COB Output Capacit |
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Inchange Semiconductor Company |
Silicon NPN Power Transistor ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff |
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Inchange Semiconductor Company |
2SD5703 ltage IC= 8A; IB= 1.6A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICBO Collector Cutoff Curr |
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Inchange Semiconductor Company |
2SC2310 tion voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.2A;L=25mH IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=5A |
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Inchange Semiconductor Company |
2SA1265N VCEsat VBE Collector-emitter saturation voltage IC=-7A; IB=-0.7A IC=-5A ; VCE=-5V -0.8 -2.0 V Base-emitter voltage -1.0 -1.5 V μA μA ICBO Collector cut-off current VCB=-140V; IE=0 -5 IEBO Emitter cut-off current VEB=-5V; IC=0 -5 hF |
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Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor down Voltage IC= 50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= |
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Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor ℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 3mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cut |
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Inchange Semiconductor Company |
Silicon NPN Power Transistor at) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A ICES Collector Cutoff Current VCE= 1400V; VBE= 0 ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB |
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Inchange Semiconductor Company |
Silicon NPN Power Transistors TICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 10V |
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Inchange Semiconductor Company Limited |
Silicon PNP Power Transistor er Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base |
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Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA IC= 8A; IB= 80mA VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; I |
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Inchange Semiconductor Company Limited |
Silicon PNP Darlington Power Transistor BR)CBO Collector-Base Breakdown Voltage IC= -50μA ; IE= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA -1.5 V ICBO Collector Cutoff Current VCB= -120V ; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 |
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Inchange Semiconductor Company |
Silicon NPN Power Transistor oltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IC= 5A ; VCE= 4V VCB= 40V; IE= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Ga |
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Inchange Semiconductor Company |
Silicon NPN Darlington Power Transistor C= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 0.3A; VCE= 10V ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO E |
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Inchange Semiconductor Company |
Silicon NPN Power Transistor Breakdown Voltage IC= 1mA ; IE= 0 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 |
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Inchange Semiconductor Company |
Silicon NPN Power Transistor icon NPN Power Transistor BD721 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0. |
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Inchange Semiconductor Company Limited |
Silicon NPN Power Transistor OL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE DC Current Gain IC= |
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Desde 2024. D4U Semiconductor.
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