2SB1340 Inchange Semiconductor Company Limited Silicon PNP Darlington Power Transistor Datasheet. existencias, precio

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2SB1340

Inchange Semiconductor Company Limited
2SB1340
2SB1340 2SB1340
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Part Number 2SB1340
Manufacturer Inchange Semiconductor Company Limited
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889 APPLICATIONS ·Designed for power amplifier applic...
Features BR)CBO Collector-Base Breakdown Voltage IC= -50μA ; IE= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA -1.5 V ICBO Collector Cutoff Current VCB= -120V ; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -2A ; VCE= -3V 2000 20000 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 70 pF fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -5V; ftest= 10MHz 12 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information containe...

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