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2SC5885 |
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| Part Number | 2SC5885 |
| Manufacturer | Inchange Semiconductor Company Limited |
| Description | ·High Breakdown Voltage ·Wide Area of Safe Operation ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Hor... |
| Features |
OL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hFE
DC Current Gain
IC= 3A; IB= 0.75A
VCB= 1000V; IE= 0 VCB= 1500V; IE= 0
IC= 3A; VCE= 5V
VECF
C-E Diode Forward Voltage
IF= 3A
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V; f= 0.5MHz
Switching times; Resistive load
tstg
Storage Time
tf
Fall Time
IC= 3A, IB1= 0.75A; IB2= -1.5A
MIN TYP. MAX UNIT
5
V
2.5
V
1.5
V
50 μA 1.0 mA
5
10
2.0
V
3
M... |
| Document |
 2SC5885 Data Sheet
PDF 181.39KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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