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Inchange Semiconductor |
Three Terminal Negative Voltage Regulator ·Output current in excess of 1A ·Output voltage of -15V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=2 |
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Inchange Semiconductor |
TO-220C Three Terminal Negative Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of -12V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta |
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Inchange Semiconductor |
Three Terminal Negative Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of -12V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta |
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Inchange Semiconductor |
Three Terminal Negative Voltage Regulator ·Output current in excess of 1A ·Output voltage of -15V ·Internal thermal overload protection ·Output transition Safe-Area compensation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=2 |
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Inchange Semiconductor |
Silicon PNP Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistor mi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD791 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= 10mA; IB= 0 V |
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Inchange Semiconductor |
Three Terminal Negative Voltage Regulator ·Output current in excess of 1.5A ·Output voltage of -12V ·Internal thermal overload protection ·Output transition Safe-Area compensation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER RATING UNIT Vi DC input voltage -35 V Io Output curren |
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Inchange Semiconductor |
N-Channel MOSFET Transistor cification 2SK791 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= |
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Desde 2024. D4U Semiconductor.
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