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2SK791 |
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| Part Number | 2SK791 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage- : VDSS=850V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulato... |
| Features |
cification
2SK791
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 1.5A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS=850V; VGS= 0 tr Rise time ton Turn-on time tf Fall time VGS=10V;ID=1.5A; RL=133Ω toff Turn-off time MIN TYP MAX UNIT 850 V 1.5 3.5 V 3.3 4.5 Ω ±100 nA 300 uA 55 120 ns 70 165 ns 60 120 ns 280 550 ns isc website：www.iscsemi.cn 2 isc ... |
| Document |
 2SK791 Data Sheet
PDF 60.94KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK790 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 2SK790 |
Toshiba |
TRANSISTOR |
|
| 3 | 2SK791 |
Toshiba Semiconductor |
Transistor |
|
| 4 | 2SK792 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK792 |
Toshiba Semiconductor |
Transistor |
|
| 6 | 2SK793 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
Desde 2024. D4U Semiconductor.
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