IXYS N60 Hoja de datos

No.	parte #	Fabricante	Descripción
1	30N60	IXYS	High speed IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C)
2	40N60	IXYS Corporation	IXSH40N60 International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q
3	IXGH60N60	IXYS Corporation	Ultra-Low VCE(sat) IGBT • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor spe
4	50N60	IXYS	IXRH50N60 q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperat
5	IXKC23N60C5	IXYS	Power MOSFET • Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) • Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - low
6	IXFK43N60	IXYS Corporation	HiPerFET Power MOSFET · International standard packages · Encapsulating epoxy meets UL 94 V-0, flammability classification · miniBLOC with Aluminium nitride isolation · Low RDS (on) HDMOSTM process · Rugged polysilicon gate cell structure · Unclamped Inductive Switching (
7	20N60	IXYS	IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C)
8	IXGM20N60A	IXYS Corporation	IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C)
9	IXFX64N60P	IXYS	PolarHV HiPerFET Power MOSFET z D = Drain Tab = Drain Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting force (PLUS247) Mounting torque (TO-264) TO-264 PLUS247 300 20..120/4.5..25 z z 1.13/10 Nm/lb.in. 10 6 g g z International standard pa
10	7N60B	IXYS Corporation	Hiperfast IGBT G = Gate, E = Emitter, E C (TAB) C = Collector, TAB = Collector Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, (TO-220) TO-220 TO-263 • International standard packages JEDEC TO-263 surface
11	60N60	IXYS Corporation	IGBT q International standard package SOT-227B q Aluminium nitride isolation - high power dissipation q Isolation voltage 3000 V~ q Very high current, fast switching IGBT q Low V for minimum on-state CE(sat) conduction losses q MOS Gate turn-on drive simp
12	IXXH100N60B3	IXYS	IGBT z Optimized for 10-30kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inver
13	IXXH100N60C3	IXYS	IGBT z Optimized for 20-60kHz Switching z Square RBSOA z Avalanche Rated z Short Circuit Capability z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inver
14	IXXH150N60C3	IXYS	IGBT  International Standard Package  Optimized for 20-60kHz Switching  Square RBSOA  Avalanche Rated  Short Circuit Capability  High Current Handling Capability Advantages  High Power Density  Low Gate Drive Requirement Applications  Power Inver
15	50N60A	IXYS	IGBT l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l High frequency IGBT l High current handling capability l 2nd generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed con
16	30N60A	IXYS	High speed IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C)
17	IXST30N60C	IXYS Corporation	High Speed IGBT l l Mounting torque (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 300 g g °C l l International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process Maximum lead temperature for soldering 1.6 mm (0.062
18	IXGH40N60	IXYS Corporation	High speed IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C)
19	IXSM30N60	IXYS Corporation	Low VCE(sat) IGBT l l Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) m
20	IXSR40N60CD1	IXYS Corporation	IGBT • • • • • DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity 50/60 Hz, RMS t = 1 min 2500 300 Maximum lead temperature for soldering 1.6