IXYS N17 Hoja de datos

No.	parte #	Fabricante	Descripción
1	IXBH10N170	IXYS Corporation	High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor z z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.13/10Nm/lb.in. 6 4 g g z z z High Blocking Volt
2	N1718NC160	IXYS	Phase Control Thyristor
3	IXBT16N170A	IXYS Corporation	High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor • Monolithic fast reverse diode • High Blocking Voltage • JEDEC TO-268 surface mount and JEDEC TO-247 AD packages • Low switching losses • High current handling capability • MOS Gate turn-on - drive simplicity • Molding epoxies meet UL 94 V-0 flammab
4	IXBT42N170A	IXYS Corporation	Monolithic Bipolar MOS Transistor z High Blocking Voltage z International Standard Packages z Anti-Parallel Diode z Low Conduction Losses Advantages z Low Gate Drive Requirement z High Power Density Applications z Switch-Mode and Resonant-Mode Power Supplies z Uninterruptible Power S
5	IXGH32N170	IXYS Corporation	High Voltage IGBT z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z z International standard packages
6	IXFX220N17T2	IXYS Corporation	GigaMOS TrenchT2 HiperFET Power MOSFET z z z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(o
7	IXBT16N170	IXYS	BIMOSFET Monolithic Bipolar MOS Transistor z High blocking voltage z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density Applications: z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Las
8	N1718NC120	IXYS	Phase Control Thyristor
9	N1718NC140	IXYS	Phase Control Thyristor
10	N1718NC180	IXYS	Phase Control Thyristor
11	N1718NC200	IXYS	Phase Control Thyristor
12	N1725MC320	IXYS	Phase Control Thyristor
13	IXBT10N170	IXYS Corporation	High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor z z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) (TO-247) TO-247 AD TO-268 1.13/10Nm/lb.in. 6 4 g g z z z High Blocking Volt
14	IXGH6N170A	IXYS Corporation	High Voltage IGBT z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification Applications z Capacitor d
15	IXBH42N170	IXYS Corporation	Monolithic Bipolar MOS Transistor z High blocking voltage z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density Applications: z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Las
16	IXBT42N170	IXYS Corporation	Monolithic Bipolar MOS Transistor z High blocking voltage z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density Applications: z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Las
17	IXFH150N17T	IXYS Corporation	Power MOSFET z z International standard package Avalanche rated z 175°C Operating Temperature z High current handling capability 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque 300 260 1.13 / 10 6 Easy to mount Space savings Hig
18	IXFT150N17T2	IXYS Corporation	Power MOSFET z z Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13/10 6 4 z z z High Current Handling Capability Fast Intrinsic Diode Dynamaic dv/dt Rated Avalanche Rated Low RDS(on) Advantages z
19	IXBT6N170	IXYS	BIMOSFET Monolithic Bipolar MOS Transistor z High blocking voltage z Integrated Anti-parallel diode z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density Applications: z Switched-mode and resonant-mode power supplies z Uninterru
20	IXBH16N170	IXYS	BIMOSFET Monolithic Bipolar MOS Transistor z High blocking voltage z International standard packages z Low conduction losses Advantages z Low gate drive requirement z High power density Applications: z Switched-mode and resonant-mode power supplies z Uninterruptible power supplies (UPS) z Las