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IXFT150N17T2 |
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| Part Number | IXFT150N17T2 |
| Manufacturer | IXYS Corporation |
| Description | Advance Technical Information TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH150N17T2 IXFT150N17T2 VDSS ID25 RDS(on) trr = = ≤ ≤ 175V 150A... |
| Features |
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Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268
300 260 1.13/10 6 4
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High Current Handling Capability Fast Intrinsic Diode Dynamaic dv/dt Rated Avalanche Rated Low RDS(on)
Advantages
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Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 150°C
Characteristic Values Min. Typ. Max. 175 2.5 4.5 ± 200 V V nA
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Easy to Mount Space Savings High Power Density
Applications
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10 μA 1.5 mA 9.7 12.0 m... |
| Document |
 IXFT150N17T2 Data Sheet
PDF 197.69KB |
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Desde 2024. D4U Semiconductor.
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