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IXFX220N17T2 |
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| Part Number | IXFX220N17T2 |
| Manufacturer | IXYS Corporation |
| Description | Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK220N17T2 IXFX220N17T2 RDS(on) ≤ ≤ trr TO-264 (IXFK) VDS... |
| Features |
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1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247)
300 260 1.13/10 20..120 /4.5..27 10 6
High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Advantages
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Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 150°C
Characteristic Values Min. Typ. Max. 170 2.5 5.0 ± 200 V V nA
Easy to Mount Space Savings High Power Density
Ap... |
| Document |
 IXFX220N17T2 Data Sheet
PDF 195.01KB |
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Desde 2024. D4U Semiconductor.
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