IXYS N06 Hoja de datos

No.	parte #	Fabricante	Descripción
1	IXFN200N06	IXYS	HiPerFET Power MOSFETs • International standard packages • miniBLOC with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast intrinsic Rectifier 50/
2	IXFR180N06	IXYS Corporation	Power MOSFET páäáÅçå=ÅÜáé=çå=aáêÉÅíJ`çééÉêJ_çåÇ ëìÄëíê~íÉ J=eáÖÜ=éçïÉê=Çáëëáé~íáçå J=fëçä~íÉÇ=ãçìåíáåÖ=ëìêÑ~ÅÉ J=ORMMs=ÉäÉÅíêáÅ~ä=áëçä~íáçå içï=Çê~áå=íç=í~Ä=Å~é~Åáí~åÅÉEYPMécF içï=oap=EçåF=eajlpqj=éêçÅÉëë oìÖÖÉÇ=éçäóëáäáÅçå=Ö~íÉ=ÅÉää=ëíêìÅíìêÉ o~íÉÇ=Ñçê=råÅä~ãéÉÇ
3	IXFP220N06T3	IXYS	Power MOSFET  International Standard Packages  175°C Operating Temperature  High Current Handling Capability  Avalanche Rated  Fast Intrinsic Rectifier  Low RDS(on) Advantages  Easy to Mount  Space Savings  High Power Density Applications  DC-DC Convert
4	IXFN340N06	IXYS Corporation	HiPerFET Power MOSFETs Single Die MOSFET International standard packages miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 N
5	IXTQ150N06P	IXYS Corporation	N-channel MOSFETs z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Easy to mount Space savings High power density 1.6 mm (0.062 in.) from case for 10 s Maximum tab
6	DE275-102N06A	IXYS Corporation	RF Power MOSFET • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low
7	DE275X2-102N06A	IXYS Corporation	RF Power MOSFET PDAMB • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertio
8	IXFH76N06-11	IXYS Corporation	Power MOSFET q D = Drain, TAB = Drain TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C q W °C °C °C °C g q q q 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 6 q International standard package JEDEC TO-247 AD L
9	IXFH76N06-12	IXYS Corporation	Power MOSFET q D = Drain, TAB = Drain TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C q W °C °C °C °C g q q q 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 6 q International standard package JEDEC TO-247 AD L
10	N0616LC400	IXYS	Phase Control Thyristor
11	N0616LC420	IXYS	Phase Control Thyristor
12	N0616LC450	IXYS	Phase Control Thyristor
13	IXFA220N06T3	IXYS	Power MOSFET  International Standard Packages  175°C Operating Temperature  High Current Handling Capability  Avalanche Rated  Fast Intrinsic Rectifier  Low RDS(on) Advantages  Easy to Mount  Space Savings  High Power Density Applications  DC-DC Convert
14	IXFK110N06	IXYS Corporation	HiPerFET Power MOSFETs • International standard packages • JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance • Fast
15	N0616LC440	IXYS	Phase Control Thyristor
16	IXFH220N06T3	IXYS	Power MOSFET  International Standard Packages  175°C Operating Temperature  High Current Handling Capability  Avalanche Rated  Fast Intrinsic Rectifier  Low RDS(on) Advantages  Easy to Mount  Space Savings  High Power Density Applications  DC-DC Convert
17	IXTP130N065T2	IXYS	Power MOSFET z International standard packages z 175°C Operating Temperature z Avalanche rated z High current handling capability z Low RDS(on) Advantages z Easy to mount z Space savings z High power density Applications z Automotive - Motor Drives - 12V Battery
18	IXTQ200N06P	IXYS	Power MOSFET l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Charact
19	IXTY12N06T	IXYS	Power MOSFET z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density Applications z Automotive - M
20	IXTU12N06T	IXYS	Power MOSFET z Ultra-low On Resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Advantages z Easy to mount z Space savings z High power density Applications z Automotive - M