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IXFH76N06-11 |
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| Part Number | IXFH76N06-11 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 60 V 60 V 70 V 70 V ID25... |
| Features |
q
D = Drain, TAB = Drain
TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
q
W °C °C °C °C g
q q
q
1.6 mm (0.062 in.) from case for 10 s Mounting torque
300 6
q
International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier
1.15/10 Nm/lb.in. Applications
q q q q
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. N06 N07 60 70 2.0 V V V nA ... |
| Document |
 IXFH76N06-11 Data Sheet
PDF 138.80KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | IXFH76N06-12 |
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| 2 | IXFH76N07-11 |
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Desde 2024. D4U Semiconductor.
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