Busque con el número de pieza junto con el fabricante o la descripción
DE275X2-102N06A |
Click to view a larger image
| Part Number | DE275X2-102N06A |
| Manufacturer | IXYS Corporation |
| Description | Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet IXYS Company Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Sw... |
| Features |
PDAMB
• Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Low gate charge and capacitances RthJHS (1) TJ TJM Tstg TL Weight Symbol Test Conditions 1.6mm (0.063 in) from case for 10 s 300 4 Characteristic Values TJ = 25°C unless otherwise specified Advantages • High Performance Push-Pull RF Package min. VDSS GS(th) typ. max. ... |
| Document |
 DE275X2-102N06A Data Sheet
PDF 105.55KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | DE275X2-501N16A |
IXYS Corporation |
RF Power MOSFET |
|
| 2 | DE275-101N30A |
IXYS Corporation |
RF Power MOSFET |
|
| 3 | DE275-102N06A |
IXYS Corporation |
RF Power MOSFET |
|
| 4 | DE275-201N25A |
IXYS Corporation |
RF Power MOSFET |
|
| 5 | DE275-501N16A |
IXYS Corporation |
RF Power MOSFET |
|
| 6 | DE21Xxxxxxxxx |
muRata |
High Voltage Ceramic Capacitors |
|
Desde 2024. D4U Semiconductor.
|