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IXYS M10 DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
M1022LC180

IXYS
Soft Recovery Diode
Datasheet
2
IXFM10N100

IXYS Corporation
Power MOSFET
q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS) rated q Low package inductance - easy to drive and to protect q Fast intrinsic Rectifier Symbol V DSS VGS
Datasheet
3
FDM100-0045SP

IXYS Corporation
Buck Chopper

• trench MOSFET - very low on state resistance RDSon - fast switching
• Schottky diode - low forward voltage drop - fast switching
• ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepag
Datasheet
4
IXTM10N100

IXYS Corporation
MOSFET
l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to prote
Datasheet
5
M1010NC450

IXYS
Fast Recovery Diode
Datasheet
6
M1010NC420

IXYS
Fast Recovery Diode
Datasheet
7
IXFM10N90

IXYS
Power MOSFETs
l International standard packages l Low R HDMOSTM process DS (on) l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic Rectifier Symbol Test Co
Datasheet
8
M1022LC200

IXYS
Soft Recovery Diode
Datasheet
9
M1022LC160

IXYS
Soft Recovery Diode
Datasheet
10
M1022LC120

IXYS
Soft Recovery Diode
Datasheet
11
M1022LC140

IXYS
Soft Recovery Diode
Datasheet
12
M1010NC440

IXYS
Fast Recovery Diode
Datasheet
13
M1010NC400

IXYS
Fast Recovery Diode
Datasheet
14
GWM100-0085X1

IXYS Corporation
Three phase full Bridge

• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
• package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding co
Datasheet
15
GWM100-01X1

IXYS Corporation
Three phase full Bridge

• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
• package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding co
Datasheet
16
M1080LC100

IXYS
Fast Recovery Diode
Datasheet
17
M1080LC120

IXYS
Fast Recovery Diode
Datasheet



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