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IXFM10N100 |
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| Part Number | IXFM10N100 |
| Manufacturer | IXYS Corporation |
| Description | HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Obsolete: IXFM10N100 IXFM12N100 Symbol Test Conditions IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 IXFH 13 N100 ... |
| Features |
q International standard packages q Low RDS (on) HDMOSTM process q Rugged polysilicon gate cell structure q Unclamped Inductive Switching (UIS)
rated q Low package inductance
- easy to drive and to protect q Fast intrinsic Rectifier
Symbol
V DSS
VGS(th) IGSS IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
V = 0 V, I = 3 mA
GS
D
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 10N100 12N100 13N100 Pulse test, t £ 300 ms, duty cycle d £ 2 % 1000 2.0 V 4... |
| Document |
 IXFM10N100 Data Sheet
PDF 149.88KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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