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IXYS Corporation |
Ultra-Low VCE(sat) IGBT • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor spe |
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IXYS Corporation |
IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
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IXYS Corporation |
(IXGH20N120 / IXGT20N120) IGBT V V V V A A A A G E G DS TO-247 (IXGH) TO-268 (IXGT) DataShee C (TAB) DataSheet4U.com -55 ... +150 150 -55 ... +150 300 260 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Md We |
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IXYS Corporation |
High speed IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
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IXYS Corporation |
Ultra-low V Ce(sat) Igbt • International standard packages • Low VCE(sat) - for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM Applications • • • |
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IXYS Corporation |
Ultra-Low VCE(sat) IGBT • International standard package JEDEC TO-247 AD, TO-264, TO-268 • New generation HDMOSTM process • Low VCE(sat) for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on drive simplicity Applications • AC motor spe |
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IXYS Corporation |
HiPerFASTTM IGBT with Diode C = Collector, TAB = Collector Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD • International standard package • Moderate frequency IGBT and antiparallel FRED in one packag |
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IXYS Corporation |
HiPerFASTTM IGBT C2-Class High Speed IGBTs z z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z z Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn |
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IXYS Corporation |
Lightspeed 2TM Series z z z z z C = Collector W °C °C °C V g °C DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications z z 50/60 Hz RMS, t = 1m 2500 |
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IXYS Corporation |
LowV-CE(sat) IGBT • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low collector to tab capacitance (<25pF) • Rugged polysilicon gate cell structure • Fast intrinsic Rectifier • Low VCE( |
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IXYS Corporation |
HiPerFAST IGBT - Surface Mountable l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l High frequency IGBT l High current handling capability l 2nd generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed con |
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IXYS Corporation |
HiPerFAST IGBT l G E C (TAB) TO-247 AD C (TAB) G C E C = Collector, TAB = Collector G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb.in. TO-247 AD TO-247 SMD 6 4 |
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IXYS Corporation |
High Voltage IGBT z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z z International standard packages |
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IXYS Corporation |
HiPerFAST IGBT z G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10Nm/lb.in. TO-247 |
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IXYS Corporation |
Low VCE(sat) IGBT • International standard packages: JEDEC TO-247AD & TO-268 • IGBT and anti-parallel FRED in one package • MOS Gate turn-on - drive simplicity • Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Cha |
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IXYS Corporation |
Low VCE(sat) IGBT • International standard packages: JEDEC TO-247AD & TO-268 • IGBT and anti-parallel FRED in one package • MOS Gate turn-on - drive simplicity • Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Applications Symbol Test Conditions Cha |
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IXYS Corporation |
GenX3 600V IGBT z z C = Collector TAB = Collector www.DataSheet4U.net Optimized for low conduction losses International standard packages Advantages z Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE |
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IXYS Corporation |
IGBTs Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C VCE = 0V, VGE = ±20V VGE = 15V, IC = 20A, Note 1 IC = 45A TJ = 125°C IC = 90A TJ = 125°C 1.54 1.54 1. |
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IXYS Corporation |
IGBTs Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C VCE = 0V, VGE = ±20V VGE = 15V, IC = 20A, Note 1 IC = 45A TJ = 125°C IC = 90A TJ = 125°C 1.54 1.54 1. |
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IXYS Corporation |
HiPerFASTTM IGBT with Diode C = Collector, TAB = Collector Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD • International standard package • Moderate frequency IGBT and antiparallel FRED in one packag |
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Desde 2024. D4U Semiconductor.
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