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IXGQ90N33TCD1 |
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| Part Number | IXGQ90N33TCD1 |
| Manufacturer | IXYS Corporation |
| Description | Trench Gate, High Speed, IGBTs For PDP Applications IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 VCES = ICP = VCE(sat) ≤ 90N33TC 330V 360A 1.80V 90N33TCD1 Symbol VCES VGES VGEM IC25 IC(RMS) IC110 ICP ICP... |
| Features |
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C VCE = 0V, VGE = ±20V VGE = 15V, IC = 20A, Note 1 IC = 45A TJ = 125°C IC = 90A TJ = 125°C 1.54 1.54 1.82 1.95 Characteristic Values Min. Typ. Max. 330 3.0 5.0 1 200 ±200 1.40 1.80 V V μA μA nA V V V V V
• Low VCE(sat) - for minimum On-State Conduction Losses • Fast Switching Applications • PDP Screen Drivers VCE = VCES, VGE = 0V © 2011 IXYS CORPORATION, All Rights Reserved DS99754B (07/11) IXGQ90N33TCD1 IXGA90N33TC IXGQ90N33TC Symbol Test Cond... |
| Document |
 IXGQ90N33TCD1 Data Sheet
PDF 138.81KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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