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IXYS Corporation GWM DataSheet

No. parte # Fabricante Descripción Hoja de Datos
1
GWM160-0055X1

IXYS Corporation
Three phase full Bridge

• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
• package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding co
Datasheet
2
GWM160-0055P3

IXYS Corporation
Three phase full bridge

• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
• package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB
Datasheet
3
GWM220-004P3

IXYS Corporation
Three phase full bridge

• MOSFETs in trench technology: - logic level gate control - low RDSon - optimized intrinsic reverse diode
• package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding
Datasheet
4
GWM70-01P2

IXYS Corporation
Three phase output MOSFET Modules

• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
• package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB
Datasheet
5
GWM120-0075X1

IXYS Corporation
Three phase full Bridge

• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
• package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding co
Datasheet
6
GWM120-0075P3

IXYS Corporation
Six-Pack MOSFET Modules

• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
• package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB
Datasheet
7
GWM100-0085X1

IXYS Corporation
Three phase full Bridge

• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
• package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding co
Datasheet
8
GWM100-01X1

IXYS Corporation
Three phase full Bridge

• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
• package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding co
Datasheet
9
GWM180-004X2

IXYS Corporation
Three phase full Bridge

• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode
• package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding co
Datasheet



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