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GWM70-01P2 |
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| Part Number | GWM70-01P2 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com Advanced Technical Information GWM 70-01P2 VDSS = 100 V ID25 = 70 A RDSon typ. = 11 mΩ Three phase full bridge with Trench MOSFETs in DCB isolated high current package L+ G3 G1 ... |
| Features |
• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 110 18 44 35 85 150 70 0.8 80 1.7 1.25 11 24 14 m Ω mΩ 4 1 V µA mA µA nC nC nC ns ns ns ns V ns 0.85 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF t r... |
| Document |
 GWM70-01P2 Data Sheet
PDF 97.40KB |
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