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GWM160-0055P3 |
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| Part Number | GWM160-0055P3 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com GWM 160-0055P3 Three phase full bridge with Trench MOSFETs in DCB isolated high current package Preliminary data L+ G3 G1 S3 S1 L1 L2 L3 G4 G2 S4 S2 LG6 S6 S5 G5 VDSS = 55 V = 1... |
| Features |
• MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode • package: - high level of integration - high current capability - auxiliary terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 2 0.1 0.2 86 18 25 25 50 70 40 0.9 100 1.7 1.4 2.3 3.8 2.9 m Ω mΩ 4 1 V µA mA µA nC nC nC ns ns ns ns V ns 0.85 K/W K/W RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF t ... |
| Document |
 GWM160-0055P3 Data Sheet
PDF 96.68KB |
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Desde 2024. D4U Semiconductor.
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