| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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IXYS Corporation |
IXSH40N60 International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q |
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IXYS Corporation |
High speed IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
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IXYS Corporation |
IXEH40N120 • IGBT with NPT (non punch through) structure • reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery • positive temperature coefficient of saturation voltage • Epo |
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IXYS Corporation |
IGBT • • • • • DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity 50/60 Hz, RMS t = 1 min 2500 300 Maximum lead temperature for soldering 1.6 |
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IXYS Corporation |
Power MOSFET l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to prote |
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IXYS Corporation |
(IXBH40N140 / IXBH40N160) High Voltage BIMOSFET Monolithic Bipolar MOS Transistor - N-Channel • International standard package JEDEC TO-247 AD • High Voltage BIMOSFETTM - replaces high voltage Darlingtons and series connected MOSFETs - lower effective RDS(on) • Monolithic construction - high blocking voltage capability - very fast turn-off ch |
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IXYS Corporation |
Low VCE(sat) IGBT International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q |
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IXYS Corporation |
Low VCE(sat) IGBT International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q |
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IXYS Corporation |
Power MOSFET Double metal process for low gate resistance International standard package Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Applications DC-DC converters Switched-mode and resonant-mode po |
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IXYS Corporation |
CoolMOS Power MOSFET q 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. miniBLOC package - Electrically isolated copper base - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation due to AlN ceramic substrate - International standard package SOT-227 - Eas |
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IXYS Corporation |
NPT3 IGBT • IGBT with NPT (non punch through) structure • reverse blocking capability - function of series diode monolithically integrated, no external series diode required - soft reverse recovery • positive temperature coefficient of saturation voltage • Epo |
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IXYS Corporation |
PolarHV HiPerFET Power MOSFETs z z 1.13/10 Nm/lb.in. 6.0 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS ID |
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IXYS Corporation |
Power MOSFET l International standard package l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99194E(12/05) IX |
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IXYS Corporation |
Power MOSFET z Low RDS(on) and QG z Avalanche Rated z Low Package Inductance z Fast Intrinsic Rectifier Advantages Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ±30V, VDS = |
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IXYS Corporation |
GigaMOS HiperFET Power MOSFET z z 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 2500 3000 300 260 1.5/13 1.3/11.5 30 z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque Terminal Connection Torque z z z International Standard Package miniBLOC, w |
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IXYS Corporation |
Polar Power MOSFET HiPerFET • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inductive Switching (UIS) t = 1min t = 1s rated • Low package induct |
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IXYS Corporation |
Power MOSFET z z 1.13/10 Nm/lb.in. 6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless othe |
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IXYS Corporation |
Power MOSFET Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - |
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IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET International standard packages miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Mounting torque Terminal connection torque 1.5/13 N |
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IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET International standard packages miniBLOC, with Aluminium nitride isolation Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped I |
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Desde 2024. D4U Semiconductor.
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